ON TEMPERATURE DEPENDENCE OF HOLE MOBILITY IN SILICON

被引：45
|
作者：
ASCHE, M
VONBORZE.J
机构：
来源：
PHYSICA STATUS SOLIDI | 1970年 / 37卷 / 01期
关键词：
D O I：
10.1002/pssb.19700370148
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：433 / &
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