ON TEMPERATURE DEPENDENCE OF HOLE MOBILITY IN SILICON

被引：45
|
作者：
ASCHE, M
VONBORZE.J
机构：
来源：
PHYSICA STATUS SOLIDI | 1970年 / 37卷 / 01期
关键词：
D O I：
10.1002/pssb.19700370148
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：433 / &
相关论文
共 50 条
  • [21] TEMPERATURE-DEPENDENCE OF THE DRIFT MOBILITY IN SILICON IRRADIATED WITH FAST ELECTRONS
    BEZLYUDNYI, SV
    KOLESNIKOV, NV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (12): : 1427 - 1428
  • [22] Temperature dependence of screw dislocation mobility on shuffle-set of silicon
    Jihoon Han
    Mingyu Park
    Arim Lee
    Dongwoo Sohn
    Jaeshin Park
    Seyoung Im
    Metals and Materials International, 2014, 20 : 899 - 907
  • [23] TEMPERATURE-DEPENDENCE OF THE MOBILITY EDGE OF HYDROGENATED AMORPHOUS-SILICON
    ZVYAGIN, IP
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (08): : 930 - 931
  • [24] HOLE DRIFT MOBILITY IN AMORPHOUS SILICON
    ALLAN, D
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 38 (04): : 381 - 392
  • [25] Hole mobility in silicon semiconductors.
    Mascali, G.
    Romano, V.
    Sellier, J. M.
    SCIENTIFIC COMPUTING IN ELECTRICAL ENGINEERING, 2006, 9 : 363 - +
  • [26] VALENCE BANDSTRUCTURE AND HOLE MOBILITY IN SILICON
    NAKAGAWA, H
    ZUKOTYNSKI, S
    CANADIAN JOURNAL OF PHYSICS, 1977, 55 (17) : 1485 - 1491
  • [27] Hole mobility in aluminium implanted silicon
    Galvagno, G
    LaFerla, A
    LaVia, F
    Raineri, V
    Gasparotto, A
    Carnera, A
    Rimini, E
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1997, 12 (11) : 1433 - 1437
  • [28] Dependence of hole mobility on channel surface of ultrathin-body silicon-on-insulator pMOSFETs
    Kwan-Su Kim
    Sang-Mo Koo
    Won-Ju Cho
    Journal of Electroceramics, 2009, 23 : 206 - 208
  • [29] Dependence of hole mobility on channel surface of ultrathin-body silicon-on-insulator pMOSFETs
    Kim, Kwan-Su
    Koo, Sang-Mo
    Cho, Won-Ju
    JOURNAL OF ELECTROCERAMICS, 2009, 23 (2-4) : 206 - 208
  • [30] TEMPERATURE-DEPENDENCE OF HOLE MOBILITY IN ALPHA PHASE OF 9,10-DICHLOROANTHRACENE
    CIPOLLINI, N
    BRAUN, CL
    CHANCE, RR
    CHEMICAL PHYSICS LETTERS, 1978, 53 (02) : 404 - 406
12345