ON TEMPERATURE DEPENDENCE OF HOLE MOBILITY IN SILICON

被引：45
|
作者：
ASCHE, M
VONBORZE.J
机构：
来源：
PHYSICA STATUS SOLIDI | 1970年 / 37卷 / 01期
关键词：
D O I：
10.1002/pssb.19700370148
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：433 / &
相关论文
共 50 条
  • [31] TEMPERATURE-DEPENDENCE OF HOLE MOBILITY IN GAAS-GA1-XALXAS HETEROJUNCTIONS
    MENDEZ, EE
    WANG, WI
    APPLIED PHYSICS LETTERS, 1985, 46 (12) : 1159 - 1161
  • [32] Electric field and temperature dependence of the hole mobility in a bis-fluorene cored dendrimer
    Gambino, S.
    Samuel, I. D. W.
    Barcena, H.
    Burn, P. L.
    ORGANIC ELECTRONICS, 2008, 9 (02) : 220 - 226
  • [33] Temperature and gate voltage dependence of hole mobility in polycrystalline oligothiophene thin film transistors
    Horowitz, G
    Hajlaoui, ME
    Hajlaoui, R
    JOURNAL OF APPLIED PHYSICS, 2000, 87 (09) : 4456 - 4463
  • [34] Temperature dependence of drift mobility in bismuth germanium oxide and bismuth silicon oxide
    Bloom, DW
    McKeever, SWS
    PROCEEDINGS OF THE 13TH INTERNATIONAL CONFERENCE ON DEFECTS IN INSULATING MATERIALS - ICDIM 96, 1997, 239- : 325 - 328
  • [35] TEMPERATURE DEPENDENCE OF HALL MOBILITY AND CARRIER CONCENTRATION IN SILICON-ON-SAPPHIRE FILMS
    DUMIN, DJ
    ROSS, EC
    JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) : 3139 - &
  • [36] A Wide Temperature Range Unified Undoped Bulk Silicon Electron and Hole Mobility Model
    Dhillon, Prabjot
    Wong, Hiu Yung
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (04) : 1979 - 1983
  • [37] TEMPERATURE DEPENDENCE OF MOBILITY IN PBS
    ELAKKAD, FM
    PHYSICA STATUS SOLIDI, 1968, 25 (02): : K115 - &
  • [38] ELECTRON AND HOLE DRIFT MOBILITY IN AMORPHOUS SILICON
    MOORE, AR
    APPLIED PHYSICS LETTERS, 1977, 31 (11) : 762 - 764
  • [39] Temperature dependence of hole transport properties through physically defined silicon quantum dots
    Shimatani, N.
    Yamaoka, Y.
    Ishihara, R.
    Andreev, A.
    Williams, D. A.
    Oda, S.
    Kodera, T.
    APPLIED PHYSICS LETTERS, 2020, 117 (09)
  • [40] Electron-hole pair creation energy and Fano factor temperature dependence in silicon
    Mazziotta, M. N.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2008, 584 (2-3): : 436 - 439
12345