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- [1] GAMMA-IRRADIATION-INDUCED CHANGES IN THE INTERNAL QUANTUM EFFICIENCY OF THE LUMINESCENCE EMITTED FROM DEEP CENTERS IN GAAS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (06): : 676 - 678
- [2] EFFECT OF PLASTIC-DEFORMATION OF GAAS ON THE INTERNAL QUANTUM EFFICIENCY OF THE LUMINESCENCE EMITTED FROM DEEP CENTERS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (09): : 1062 - 1064
- [3] HEAT-TREATMENT-INDUCED CHANGES IN INTERNAL QUANTUM EFFICIENCY OF LUMINESCENCE DUE TO DEEP CENTERS IN GAAS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (11): : 1288 - 1289
- [6] Luminescence and Internal Quantum Efficiency of Deep UV Light Emitting Diodes 2020 INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES (NUSOD), 2020, : 57 - 58
- [7] CHANGES IN THE INTERNAL QUANTUM EFFICIENCY OF DEEP-CENTER LUMINESCENCE CAUSED BY ANNEALING OF ELECTRON-IRRADIATED GAAS CRYSTALS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (04): : 471 - 472
- [10] QUANTUM EFFICIENCY OF THE LUMINESCENCE EMITTED FROM DOUBLE INGAASP HETEROSTRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (04): : 400 - 402