共 50 条
- [34] Frequency dependent C–V and G/ω–V characteristics on the illumination-induced Au/ZnO/n-GaAs Schottky barrier diodes Journal of Materials Science: Materials in Electronics, 2017, 28 : 4951 - 4957
- [35] Intraband photoconductivity induced by interband illumination in InAs/GaAs heterostructures with quantum dots Semiconductors, 2012, 46 : 1415 - 1417
- [36] CHANGES IN THE RECOMBINATION PROPERTIES OF DEEP LUMINESCENCE-CENTERS DURING ANNEALING OF IRRADIATED GAAS CRYSTALS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (01): : 104 - 105
- [37] Measuring the internal luminescence quantum efficiency of OLED emitter materials in electrical operation LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XIV, 2010, 7617
- [38] EXTERNAL QUANTUM EFFICIENCY OF THE LUMINESCENCE EMITTED BY ALGAAS DOUBLE HETEROSTRUCTURES WITH SMOOTH AND DIFFUSELY SCATTERING EMITTING SURFACES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (08): : 868 - 870