共 50 条
- [43] Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains Kondratenko, S.V., 1600, American Institute of Physics Inc. (116):
- [45] Internal quantum efficiency measurements of GaInP quantum well laser material using liquid contact luminescence LASER DIODES AND APPLICATIONS II, 1996, 2682 : 136 - 143
- [47] CHANGES IN RECOMBINATION PROPERTIES OF DEEP LUMINESCENCE-CENTERS DUE TO IRRADIATION OF GAAS WITH GAMMA-RAYS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (09): : 1093 - 1094
- [49] Absolute external luminescence quantum efficiency of GaAs/Al0.3Ga0.7As multiple quantum wells PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2003, 198 (01): : 248 - 254
- [50] EXTERNAL QUANTUM EFFICIENCY OF THE LUMINESCENCE EMITTED BY AlGaAs DOUBLE HETEROSTRUCTURES WITH SMOOTH AND DIFFUSELY SCATTERING EMITTING SURFACES. Soviet physics. Semiconductors, 1981, 15 (08): : 868 - 870