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- [1] ILLUMINATION-INDUCED CHANGE IN THE INTERNAL QUANTUM EFFICIENCY OF THE LUMINESCENCE EMITTED BY DEEP CENTERS IN GAASSOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (02): : 165 - 167VOVNENKO, VIGLINCHUK, KDPROKHOROVICH, AV
- [2] EFFECT OF PLASTIC-DEFORMATION OF GAAS ON THE INTERNAL QUANTUM EFFICIENCY OF THE LUMINESCENCE EMITTED FROM DEEP CENTERSSOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (09): : 1062 - 1064VOVNENKO, VIGLINCHUK, KDPROKHOROVICH, AV
- [3] HEAT-TREATMENT-INDUCED CHANGES IN INTERNAL QUANTUM EFFICIENCY OF LUMINESCENCE DUE TO DEEP CENTERS IN GAASSOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (11): : 1288 - 1289VOVNENKO, VIGLINCHUK, KDPROKHOROVICH, AV
- [4] CHANGES IN RECOMBINATION PROPERTIES OF DEEP LUMINESCENCE-CENTERS DUE TO IRRADIATION OF GAAS WITH GAMMA-RAYSSOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (09): : 1093 - 1094VOVNENKO, VIGLINCHUK, KDLUKAT, K
- [6] CHANGES IN THE INTERNAL QUANTUM EFFICIENCY OF DEEP-CENTER LUMINESCENCE CAUSED BY ANNEALING OF ELECTRON-IRRADIATED GAAS CRYSTALSSOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (04): : 471 - 472GLINCHUK, KDZAYATS, NSPROKHOROVICH, AV
- [7] Changes in luminescence emission induced by proton irradiation: InGaAs/GaAs quantum wells and quantum dotsAPPLIED PHYSICS LETTERS, 2000, 76 (15) : 2074 - 2076Leon, RSwift, GMMagness, BTaylor, WATang, YSWang, KLDowd, PZhang, YH
- [8] QUANTUM EFFICIENCY OF THE LUMINESCENCE EMITTED FROM DOUBLE INGAASP HETEROSTRUCTURESSOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (04): : 400 - 402BERT, NAGARBUZOV, DZGORELENOK, ATKONNIKOV, SGMDIVANI, VNTIBILOV, VKCHALYI, VP
- [10] Canopy position and heat treatments influence gamma-irradiation-induced changes in phenylpropanoid metabolism in grapefruitJOURNAL OF THE AMERICAN SOCIETY FOR HORTICULTURAL SCIENCE, 2000, 125 (03) : 364 - 369McDonald, REMiller, WRMcCollum, TG