TRANSPORT-PROPERTIES OF A SILICON SINGLE-ELECTRON TRANSISTOR AT 4.2-K

We report on the transport properties of a silicon single-electron transistor at 4.2 K. A quantum dot is formed in the inversion layer of a silicon metal-oxide-semiconductor field-effect transistor with a dual-gate structure by introducing controllable tunnel barriers in the narrow channel. Periodic current oscillations due to the single-electron charging effect have been observed. Furthermore, current in the Coulomb blackade regime is explained by the inelastic cotunneling theory at finite temperatures. © 1995 American Institute of Physics.