TRANSPORT-PROPERTIES OF A SILICON SINGLE-ELECTRON TRANSISTOR AT 4.2-K

被引：29

作者：

MATSUOKA, H

KIMURA, S

机构：

[1] Central Research Laboratory, Hitachi Ltd., Tokyo 185

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 05期

关键词：

D O I：

10.1063/1.114030

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the transport properties of a silicon single-electron transistor at 4.2 K. A quantum dot is formed in the inversion layer of a silicon metal-oxide-semiconductor field-effect transistor with a dual-gate structure by introducing controllable tunnel barriers in the narrow channel. Periodic current oscillations due to the single-electron charging effect have been observed. Furthermore, current in the Coulomb blackade regime is explained by the inelastic cotunneling theory at finite temperatures. © 1995 American Institute of Physics.

引用

页码：613 / 615

页数：3

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