TRANSPORT-PROPERTIES OF A SILICON SINGLE-ELECTRON TRANSISTOR AT 4.2-K

被引：29
|
作者：
MATSUOKA, H
KIMURA, S
机构：
[1] Central Research Laboratory, Hitachi Ltd., Tokyo 185
来源：
APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 05期
关键词：
D O I：
10.1063/1.114030
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on the transport properties of a silicon single-electron transistor at 4.2 K. A quantum dot is formed in the inversion layer of a silicon metal-oxide-semiconductor field-effect transistor with a dual-gate structure by introducing controllable tunnel barriers in the narrow channel. Periodic current oscillations due to the single-electron charging effect have been observed. Furthermore, current in the Coulomb blackade regime is explained by the inelastic cotunneling theory at finite temperatures. © 1995 American Institute of Physics.
引用
收藏
页码：613 / 615
页数：3
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