SHALLOW DEFECT LEVELS IN NEUTRON-IRRADIATED EXTRINSIC P-TYPE SILICON

被引：0
|
作者：
YOUNG, MH [1 ]
MARSH, OJ [1 ]
BARON, R [1 ]
机构：
[1] HUGHES AIRCRAFT CO,RES LABS,LOS ANGELES,CA 90009
来源：
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1977年 / 22卷 / 10期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
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页码：1241 / 1242
页数：2
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