SHALLOW DEFECT LEVELS IN NEUTRON-IRRADIATED EXTRINSIC P-TYPE SILICON

被引：0

作者：

YOUNG, MH ^{[1
]}

MARSH, OJ ^{[1
]}

BARON, R ^{[1
]}

机构：

[1] HUGHES AIRCRAFT CO,RES LABS,LOS ANGELES,CA 90009

来源：

BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1977年 / 22卷 / 10期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1241 / 1242

页数：2

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