MICROSCOPIC THEORY OF IMPURITY-DEFECT REACTIONS AND IMPURITY DIFFUSION IN SILICON

被引：121

作者：

CAR, R ^{[1
]}

KELLY, PJ ^{[1
]}

OSHIYAMA, A ^{[1
]}

PANTELIDES, ST ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW LETTERS | 1985年 / 54卷 / 04期

关键词：

D O I：

10.1103/PhysRevLett.54.360

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：360 / 363

页数：4

共 17 条

[1] DIFFUSION OF SUBSTITUTIONAL IMPURITIES IN SILICON AT SHORT OXIDATION TIMES - AN INSIGHT INTO POINT-DEFECT KINETICS [J].

ANTONIADIS, DA ;

MOSKOWITZ, I .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :6788-6796

[2] MIGRATION OF INTERSTITIALS IN SILICON [J].

BARAFF, GA ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1984, 30 (06) :3460-3469

[3] SILICON SELF-INTERSTITIAL MIGRATION - MULTIPLE PATHS AND CHARGE STATES [J].

BARYAM, Y ;

JOANNOPOULOS, JD .

PHYSICAL REVIEW B, 1984, 30 (04) :2216-2218

[4] BARRIER TO MIGRATION OF THE SILICON SELF-INTERSTITIAL [J].

BARYAM, Y ;

JOANNOPOULOS, JD .

PHYSICAL REVIEW LETTERS, 1984, 52 (13) :1129-1132

[5]

BARYAM Y, UNPUB J ELECTRON MAT

[6] MICROSCOPIC THEORY OF ATOMIC DIFFUSION MECHANISMS IN SILICON [J].

CAR, R ;

KELLY, PJ ;

OSHIYAMA, A ;

PANTELIDES, ST .

PHYSICAL REVIEW LETTERS, 1984, 52 (20) :1814-1817

[7] VACANCY-DIFFUSION MODEL FOR QUENCHED-IN E-CENTERS IN CW-LASER ANNEALED VIRGIN SILICON [J].

CHANTRE, A ;

KECHOUANE, M ;

BOIS, D .

PHYSICA B & C, 1983, 116 (1-3) :547-552

[8]

FAIR RB, 1981, J APPL PHYS, V51, P5828

[9]

FRANK W, UNPUB DIFFUSION SOLI

[10]

Hu S. M., 1973, ATOMIC DIFFUSION SEM, P217

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