MICROSCOPIC THEORY OF ATOMIC DIFFUSION MECHANISMS IN SILICON

被引：264

作者：

CAR, R ^{[1
]}

KELLY, PJ ^{[1
]}

OSHIYAMA, A ^{[1
]}

PANTELIDES, ST ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW LETTERS | 1984年 / 52卷 / 20期

关键词：

D O I：

10.1103/PhysRevLett.52.1814

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1814 / 1817

页数：4

共 19 条

[1]

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[5] BARRIER TO MIGRATION OF THE SILICON SELF-INTERSTITIAL [J].

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JOANNOPOULOS, JD .

PHYSICAL REVIEW LETTERS, 1984, 52 (13) :1129-1132

[6] SELF-CONSISTENT METHOD FOR POINT-DEFECTS IN SEMICONDUCTORS - APPLICATION TO VACANCY IN SILICON [J].

BERNHOLC, J ;

LIPARI, NO ;

PANTELIDES, ST .

PHYSICAL REVIEW LETTERS, 1978, 41 (13) :895-899

[7]

CAR R, UNPUB

[8]

FRANK W, UNPUB DIFFUSION SOLI, V2

[9]

FRANK W, 1982, ADV SOLID STATE PHYS, V21

[10] NORM-CONSERVING PSEUDOPOTENTIALS [J].

HAMANN, DR ;

SCHLUTER, M ;

CHIANG, C .

PHYSICAL REVIEW LETTERS, 1979, 43 (20) :1494-1497

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