THEORY OF ENHANCED MIGRATION OF INTERSTITIAL ALUMINUM IN SILICON

被引：60

作者：

BARAFF, GA

SCHLUTER, M

ALLAN, G

机构：

来源：

PHYSICAL REVIEW LETTERS | 1983年 / 50卷 / 10期

关键词：

D O I：

10.1103/PhysRevLett.50.739

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：739 / 742

页数：4

共 16 条

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