THEORY OF ENHANCED MIGRATION OF INTERSTITIAL ALUMINUM IN SILICON

被引：60

作者：

BARAFF, GA

SCHLUTER, M

ALLAN, G

机构：

来源：

关键词：

D O I：

10.1103/PhysRevLett.50.739

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：739 / 742

页数：4

共 16 条

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CHATTERJEE, AP ;

WATKINS, GD ;

KIMERLING, LC .

PHYSICAL REVIEW B, 1979, 19 (10) :5336-5348

[14]

WATKINS GD, 1979, I PHYSICS C SERIES, V46, P16

[15] CARBON INTERSTITIAL IN DIAMOND LATTICE [J].

WEIGEL, C ;

PEAK, D ;

CORBETT, JW ;

WATKINS, GD ;

MESSMER, RP .

PHYSICAL REVIEW B, 1973, 8 (06) :2906-2915

[16]

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