MICROSCOPIC THEORY OF ATOMIC DIFFUSION MECHANISMS IN SILICON

被引：264

作者：

CAR, R ^{[1
]}

KELLY, PJ ^{[1
]}

OSHIYAMA, A ^{[1
]}

PANTELIDES, ST ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW LETTERS | 1984年 / 52卷 / 20期

关键词：

D O I：

10.1103/PhysRevLett.52.1814

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1814 / 1817

页数：4

共 19 条

[11] EFFECT OF INVARIANCE REQUIREMENTS ON ELASTIC STRAIN ENERGY OF CRYSTALS WITH APPLICATION TO DIAMOND STRUCTURE [J].

KEATING, PN .

PHYSICAL REVIEW, 1966, 145 (02) :637-&

[12]

MARCH NH, 1984, INHOMOGENEOUS ELECTR

[13] MULTIVACANCIES, INTERSTITIALS, AND SELF-INTERSTITIAL MIGRATION IN SILICON [J].

PANTELIDES, ST ;

IVANOV, I ;

SCHEFFLER, M ;

VIGNERON, JP .

PHYSICA B & C, 1983, 116 (1-3) :18-27

[14]

Shaw D, 2012, ATOMIC DIFFUSION SEM

[15] STANDARD THERMODYNAMIC FUNCTIONS FOR FORMATION OF ELECTRONS AND HOLES IN GE, SI, GAAS, AND GAP [J].

THURMOND, CD .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (08) :1133-1141

[16]

Watkins G.D., 1975, LATTICE DEFECTS SEMI, V23, P1

[17] PROPERTIES OF INTERSTITIAL IN DIAMOND-TYPE LATTICE [J].

WATKINS, GD ;

MESSMER, RP ;

WEIGEL, C ;

PEAK, D ;

CORBETT, JW .

PHYSICAL REVIEW LETTERS, 1971, 27 (23) :1573-&

[18] NEGATIVE-U PROPERTIES FOR POINT-DEFECTS IN SILICON [J].

WATKINS, GD ;

TROXELL, JR .

PHYSICAL REVIEW LETTERS, 1980, 44 (09) :593-596

[19] GREEN-FUNCTION METHODS FOR ELECTRONIC-STRUCTURE CALCULATIONS [J].

WILLIAMS, AR ;

FEIBELMAN, PJ ;

LANG, ND .

PHYSICAL REVIEW B, 1982, 26 (10) :5433-5444

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