MIGRATION OF INTERSTITIALS IN SILICON

被引：173
作者：
BARAFF, GA
SCHLUTER, M
机构：
来源：
PHYSICAL REVIEW B | 1984年 / 30卷 / 06期
关键词：
D O I：
10.1103/PhysRevB.30.3460
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：3460 / 3469
页数：10
相关论文
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[10]  
BARAFF GA, UNPUB
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