CALCULATION OF THE TOTAL ENERGY OF CHARGED POINT-DEFECTS USING THE GREENS-FUNCTION TECHNIQUE

被引：79
作者：
BARAFF, GA
SCHLUTER, M
机构：
来源：
PHYSICAL REVIEW B | 1984年 / 30卷 / 04期
关键词：
D O I：
10.1103/PhysRevB.30.1853
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：1853 / 1866
页数：14
相关论文
共 44 条
[1]  
[Anonymous], SOLID STATE PHYS
[2]   ASGA ANTISITE DEFECT IN GAAS [J].
BACHELET, GB ;
SCHLUTER, M ;
BARAFF, GA .
PHYSICAL REVIEW B, 1983, 27 (04) :2545-2547
[3]   MICROSCOPIC LOCAL FIELDS IN DIELECTRICS [J].
BALDERESCHI, A ;
CAR, R ;
TOSATTI, E .
SOLID STATE COMMUNICATIONS, 1979, 32 (09) :757-760
[4]   CLUSTER-EXTENDED GREENS-FUNCTION FOR ELECTRONIC-STRUCTURE OF LOCALIZED DEFECTS IN SOLIDS [J].
BARAFF, GA ;
SCHLUTER, M ;
ALLAN, G .
PHYSICAL REVIEW B, 1983, 27 (02) :1010-1016
[5]   NEW SELF-CONSISTENT APPROACH TO THE ELECTRONIC-STRUCTURE OF LOCALIZED DEFECTS IN SOLIDS [J].
BARAFF, GA ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1979, 19 (10) :4965-4979
[6]   THEORY OF THE SILICON VACANCY - AN ANDERSON NEGATIVE-U SYSTEM [J].
BARAFF, GA ;
KANE, EO ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1980, 21 (12) :5662-5686
[7]   TOTAL ENERGY OF ISOLATED POINT-DEFECTS IN SOLIDS [J].
BARAFF, GA ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1983, 28 (04) :2296-2298
[8]  
BARAFF GA, UNPUB
[9]  
BARAFF GA, 1981, 11TH P INT C DEF RAD, P287
[10]   SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .2. SELF-CONSISTENT FORMULATION AND APPLICATION TO THE VACANCY IN SILICON [J].
BERNHOLC, J ;
LIPARI, NO ;
PANTELIDES, ST .
PHYSICAL REVIEW B, 1980, 21 (08) :3545-3562
12345