SILICON SELF-INTERSTITIAL MIGRATION - MULTIPLE PATHS AND CHARGE STATES

被引：66

作者：

BARYAM, Y

JOANNOPOULOS, JD

机构：

来源：

PHYSICAL REVIEW B | 1984年 / 30卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.30.2216

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2216 / 2218

页数：3

共 11 条

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