ELECTRONIC-STRUCTURE AND TOTAL-ENERGY MIGRATION BARRIERS OF SILICON SELF-INTERSTITIALS

被引：123
作者：
BARYAM, Y
JOANNOPOULOS, JD
机构：
来源：
PHYSICAL REVIEW B | 1984年 / 30卷 / 04期
关键词：
D O I：
10.1103/PhysRevB.30.1844
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
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页码：1844 / 1852
页数：9
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共 33 条
[1]   PSEUDOPOTENTIALS THAT WORK - FROM H TO PU [J].
BACHELET, GB ;
HAMANN, DR ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1982, 26 (08) :4199-4228
[2]   TOTAL ENERGY OF ISOLATED POINT-DEFECTS IN SOLIDS [J].
BARAFF, GA ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1983, 28 (04) :2296-2298
[3]   THEORY OF ENHANCED MIGRATION OF INTERSTITIAL ALUMINUM IN SILICON [J].
BARAFF, GA ;
SCHLUTER, M ;
ALLAN, G .
PHYSICAL REVIEW LETTERS, 1983, 50 (10) :739-742
[4]  
BARAFF GA, UNPUB
[5]   SILICON SELF-INTERSTITIAL MIGRATION - MULTIPLE PATHS AND CHARGE STATES [J].
BARYAM, Y ;
JOANNOPOULOS, JD .
PHYSICAL REVIEW B, 1984, 30 (04) :2216-2218
[6]   BARRIER TO MIGRATION OF THE SILICON SELF-INTERSTITIAL [J].
BARYAM, Y ;
JOANNOPOULOS, JD .
PHYSICAL REVIEW LETTERS, 1984, 52 (13) :1129-1132
[7]   NEW MECHANISM FOR INTERSTITIAL MIGRATION [J].
BOURGOIN, JC ;
CORBETT, JW .
PHYSICS LETTERS A, 1972, A 38 (02) :135-&
[8]  
BOURGOIN JC, DIFFUSION SOLIDS, V2, P149
[9]   MICROSCOPIC THEORY OF ATOMIC DIFFUSION MECHANISMS IN SILICON [J].
CAR, R ;
KELLY, PJ ;
OSHIYAMA, A ;
PANTELIDES, ST .
PHYSICAL REVIEW LETTERS, 1984, 52 (20) :1814-1817
[10]   GROUND-STATE OF THE ELECTRON-GAS BY A STOCHASTIC METHOD [J].
CEPERLEY, DM ;
ALDER, BJ .
PHYSICAL REVIEW LETTERS, 1980, 45 (07) :566-569
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