INGAAS/INP-FE JUNCTION FIELD-EFFECT TRANSISTOR FOR OPTOELECTRONIC INTEGRATION

被引：0

|

作者：

ALBRECHT, H

HUBER, H

LAUTERBACH, C

PLIHAL, M

机构：

来源：

SIEMENS FORSCHUNGS-UND ENTWICKLUNGSBERICHTE-SIEMENS RESEARCH AND DEVELOPMENT REPORTS | 1985年 / 14卷 / 06期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：295 / 298

页数：4

相关论文

共 50 条

[31] CHARGE STORAGE JUNCTION FIELD-EFFECT TRANSISTOR.
Arai, M.
1973, : 72 - 74
[32] GAAS NEGATIVE CONDUCTANCE JUNCTION FIELD-EFFECT TRANSISTOR
TUCKER, TW
YOUNG, L
SOLID-STATE ELECTRONICS, 1974, 17 (01) : 31 - 34
[33] ELECTRIC CURRENT SATURATION IN A JUNCTION FIELD-EFFECT TRANSISTOR
KENNEDY, DP
OBRIEN, RR
SOLID-STATE ELECTRONICS, 1969, 12 (10) : 829 - &
[34] CHARGE-STORAGE JUNCTION FIELD-EFFECT TRANSISTOR
ARAI, M
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (04) : 181 - 185
[35] InGaP/InGaAs field-effect transistor typed hydrogen sensor
Tsai, Jung-Hui
Liou, Syuan-Hao
Lin, Pao-Sheng
Chen, Yu-Chi
APPLIED SURFACE SCIENCE, 2018, 432 : 224 - 227
[36] DEMONSTRATION OF HIGH-PERFORMANCE HETEROJUNCTION FIELD-EFFECT TRANSISTOR IN INALAS/INGAAS/INALGAAS/INP MATERIAL SYSTEM
MAND, RS
SIMMONS, JG
ELECTRONICS LETTERS, 1991, 27 (16) : 1453 - 1454
[37] INP FIELD-EFFECT TRANSISTOR FOR MICROWAVE-POWER AMPLIFICATION
ARMAND, M
BUI, DV
CHEVRIER, J
LINH, NT
REVUE TECHNIQUE THOMSON-CSF, 1984, 16 (01): : 47 - 98
[38] DEMONSTRATION OF A HETEROSTRUCTURE FIELD-EFFECT LASER FOR OPTOELECTRONIC INTEGRATION
TAYLOR, GW
CLAISSE, PR
COOKE, P
APPLIED PHYSICS LETTERS, 1991, 58 (07) : 666 - 668
[39] GAAS FIELD-EFFECT TRANSISTORS PREPARED ON LATTICE-MISMATCHED INP SUBSTRATES FOR MONOLITHIC OPTOELECTRONIC INTEGRATION
CHEN, CY
ANTREASYAN, A
CHO, AY
GARBINSKI, PA
ELECTRONICS LETTERS, 1984, 20 (21) : 865 - 866
[40] SUPERCONDUCTING INGAAS JUNCTION FIELD-EFFECT TRANSISTORS WITH NB ELECTRODES
KLEINSASSER, AW
JACKSON, TN
MCINTURFF, D
RAMMO, F
PETTIT, GD
WOODALL, JM
APPLIED PHYSICS LETTERS, 1989, 55 (18) : 1909 - 1911

← 1 2 3 4 5 →