INGAAS/INP-FE JUNCTION FIELD-EFFECT TRANSISTOR FOR OPTOELECTRONIC INTEGRATION

被引：0
|
作者：
ALBRECHT, H
HUBER, H
LAUTERBACH, C
PLIHAL, M
机构：
来源：
SIEMENS FORSCHUNGS-UND ENTWICKLUNGSBERICHTE-SIEMENS RESEARCH AND DEVELOPMENT REPORTS | 1985年 / 14卷 / 06期
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：295 / 298
页数：4
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