PROPERTIES OF SIMOX AND BONDED SOI MATERIAL

被引：12
|
作者：
GOSELE, U [1 ]
REICHE, M [1 ]
TONG, QY [1 ]
机构：
[1] DUKE UNIV,SCH ENGN,WAFER BONDING LAB,DURHAM,NC 27708
来源：
MICROELECTRONIC ENGINEERING | 1995年 / 28卷 / 1-4期
关键词：
D O I：
10.1016/0167-9317(95)00083-K
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Presently the most prominent silicon materials considered for silicon-on-insulator (SOI) technologies are SIMOX (separation by implanted oxygen) and bonded SOI. The present paper will review recent developments for these two types of approaches for SOI materials with special emphasis on the progress in obtaining ultra thin bonded SOI layers by local plasma etching or an etch-back procedure involving stress compensated boron-germanium doped etch-stop layers.
引用
收藏
页码：391 / 397
页数：7
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