PROPERTIES OF SIMOX AND BONDED SOI MATERIAL

被引：12
|
作者：
GOSELE, U [1 ]
REICHE, M [1 ]
TONG, QY [1 ]
机构：
[1] DUKE UNIV,SCH ENGN,WAFER BONDING LAB,DURHAM,NC 27708
来源：
MICROELECTRONIC ENGINEERING | 1995年 / 28卷 / 1-4期
关键词：
D O I：
10.1016/0167-9317(95)00083-K
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Presently the most prominent silicon materials considered for silicon-on-insulator (SOI) technologies are SIMOX (separation by implanted oxygen) and bonded SOI. The present paper will review recent developments for these two types of approaches for SOI materials with special emphasis on the progress in obtaining ultra thin bonded SOI layers by local plasma etching or an etch-back procedure involving stress compensated boron-germanium doped etch-stop layers.
引用
收藏
页码：391 / 397
页数：7
相关论文
共 50 条
  • [31] Defect control methods for SIMOX SOI wafer manufacture and processing
    Alles, M
    Dunne, J
    NacNish, S
    Burns, M
    Cheung, L
    2000 IEEE/SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE AND WORKSHOP, 2000, : 323 - 327
  • [32] Independent implant parameter effects on SIMOX SOI dislocation formation
    Datta, R
    Allen, LP
    Dolan, RP
    Jones, KS
    Farley, M
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 46 (1-3): : 8 - 13
  • [33] Hole mobilities in the Si/SiGe grown on nanometer SOI of SIMOX
    Fujinaga, K
    2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS, 2004, : 2218 - 2221
  • [34] Radiative properties of SIMOX
    Ravindra, NM
    Abedrabbo, S
    Gokce, OH
    Tong, FM
    Patel, A
    Velagapudi, R
    Williamson, GD
    Maszara, WP
    IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY PART A, 1998, 21 (03): : 441 - 449
  • [35] Photodiodes in bonded SOI films
    Harendt, C
    Beintner, J
    Schuhbauer, A
    Apel, U
    Dudek, V
    Graf, HG
    Hofflinger, B
    Seger, U
    SEMICONDUCTOR WAFER BONDING: SCIENCE, TECHNOLOGY, AND APPLICATIONS IV, 1998, 36 : 568 - 575
  • [36] Role of SIMOX defects on the structural properties of β-SiC/SIMOX
    Ferro, G
    Planes, N
    Papaioannou, V
    Chaussende, D
    Monteil, Y
    Stoemenos, Y
    Camassel, J
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 61-2 : 586 - 592
  • [37] Evolution and future trends of SIMOX material
    Krause, S
    Anc, M
    Roitman, P
    MRS BULLETIN, 1998, 23 (12) : 25 - 29
  • [38] FORMATION OF THERMAL DONORS IN SIMOX MATERIAL
    HENLEY, WB
    EDELMAN, P
    ANC, M
    JOURNAL OF ELECTRONIC MATERIALS, 1992, 21 (05) : 519 - 522
  • [39] Evolution and Future Trends of SIMOX Material
    Steve Krause
    Maria Ane
    Peter Roitman
    MRS Bulletin, 1998, 23 : 25 - 29
  • [40] Low dose SIMOX and impact of ITOX process on quality of SOI film
    Maszara, WP
    Bennett, J
    Boden, T
    Dockerty, R
    Gondran, CFH
    Jackett-Murphy, S
    Vasudev, PK
    Anc, MJ
    Hovel, H
    1997 IEEE INTERNATIONAL SOI CONFERENCE PROCEEDINGS, 1996, : 18 - 19
12345