PROPERTIES OF SIMOX AND BONDED SOI MATERIAL

被引：12

作者：

GOSELE, U ^{[1
]}

REICHE, M ^{[1
]}

TONG, QY ^{[1
]}

机构：

[1] DUKE UNIV,SCH ENGN,WAFER BONDING LAB,DURHAM,NC 27708

来源：

MICROELECTRONIC ENGINEERING | 1995年 / 28卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(95)00083-K

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Presently the most prominent silicon materials considered for silicon-on-insulator (SOI) technologies are SIMOX (separation by implanted oxygen) and bonded SOI. The present paper will review recent developments for these two types of approaches for SOI materials with special emphasis on the progress in obtaining ultra thin bonded SOI layers by local plasma etching or an etch-back procedure involving stress compensated boron-germanium doped etch-stop layers.

引用

页码：391 / 397

页数：7

共 50 条

[21] Effects of Si ion implantation on the total-dose radiation properties of SIMOX SOI materials
Yang, Hui
Zhang, Enxia
Zhang, Zhengxuan
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2007, 28 (03): : 323 - 326
[22] SIMOX: material development and characterization
Anc, M.J.
Electron Technology (Warsaw), 1999, 32 (01): : 45 - 49
[23] SOI MATERIAL PROPERTIES DETERMINED BY ELECTRICAL CHARACTERIZATION
RAICHOUDHURY, P
HILLARD, RJ
HEDDLESON, JM
WEINZIERL, SR
ABE, T
KARULKAR, P
PAWLIK, M
MICROELECTRONIC ENGINEERING, 1992, 19 (1-4) : 827 - 832
[24] The study of the formation of thin SOI structure by SIMOX with water plasma
Jing, C
Meng, C
Xiang, W
Dong, YM
Zhihong, Z
Xi, W
MATERIALS ISSUES IN NOVEL SI-BASED TECHNOLOGY, 2002, 686 : 47 - 52
[25] Surface smoothing effect in patterned SOI fabrication with SIMOX technology
Sasaki, T
Takayama, S
Kawamura, K
Maeda, T
Nagatake, Y
Matsumura, A
2003 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS, 2003, : 48 - 49
[26] A recent study of the formation of SIMOX/SOI materials and their device applications
Zhang, JP
Li, YX
Xi, XM
Zhang, X
Wang, YY
ION IMPLANTATION TECHNOLOGY - 96, 1997, : 37 - 40
[27] Influence of silicon film thickness and back gate on thin film fully depleted MOSFET characteristics of SIMOX/SOI material
Peking Univ, Beijing, China
Pan Tao Ti Hsueh Pao, 3 (206-211):
[28] Independent implant parameter effects on SIMOX SOI dislocation formation
Univ of Florida, Gainesville, United States
Mater Sci Eng B Solid State Adv Technol, 1-3 (8-13):
[29] Fabrication of a lateral field emission diode using SIMOX SOI
Bae, YH
Zang, WJ
Hahm, SH
Lee, JW
Lee, JH
Lee, JH
PROCEEDINGS OF THE NINTH INTERNATIONAL SYMPOSIUM ON SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES, 1999, 99 (03): : 67 - 72
[30] The current status and future trends of SIMOX/SOI, new technological applications of the SiC/SOI system
Stoemenos, J
FUNDAMENTAL ASPECTS OF ULTRATHIN DIELECTRICS ON SI-BASED DEVICES, 1998, 47 : 477 - 491

← 1 2 3 4 5 →