MINORITY-CARRIER LIFETIME IMPROVEMENT BY GETTERING IN SI1-XGEX

被引：2

作者：

LOSADA, BR

MOEHLECKE, A

LAGOS, R

LUQUE, A

机构：

[1] Instituto de Energía Solar, Universidad Politécnica de Madrid

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 13期

关键词：

D O I：

10.1063/1.114368

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Monocrystalline Si1-xGex alloys may be an interesting material for infrared solar applications and dual band gap systems such as GaAs/Si1-xGex. At present, monocrystalline ingots of Si1-xGex have been grown by the float zone (FZ) technique, but the minority carrier lifetime in the wafers is quite low. Gettering treatment by POCl8 over Si1-xGex samples brings about a substantial improvement of minority carrier lifetime, achieving values similar to FZ-silicon wafers, that is over 200 mu s in high resistivity samples if the Ge constant is below 5%. (C) 1995 American Institute of Physics.

引用

页码：1894 / 1895

页数：2

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