MINORITY-CARRIER LIFETIME IMPROVEMENT BY HCL OXIDATION AND ARGON ION-IMPLANTATION OF SILICON

被引：3
|
作者：
ENGEL, PM [1 ]
DESOUZA, JP [1 ]
机构：
[1] UNIV FED RIO GRANDE SUL,INST FIS,BR-90000 PORTO ALEGRE,RS,BRAZIL
来源：
JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 07期
关键词：
D O I：
10.1063/1.332518
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：4211 / 4212
页数：2
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