MINORITY-CARRIER LIFETIME IN LASER RECRYSTALLIZED POLYSILICON

被引：2
|
作者：
SAKATA, I
HAYASHI, Y
ISHII, K
TAKAHASHI, T
YAMANAKA, M
机构：
[1] Electrotechnical Lab, Sakura-mura, Jpn, Electrotechnical Lab, Sakura-mura, Jpn
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1986年 / 25卷 / 04期
关键词：
CERAMIC MATERIALS - ELECTRONS - LASERS - Applications - SUBSTRATES;
D O I：
10.1143/JJAP.25.L328
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have measured the minority carrier (electron, in this case) lifetime in the laser recrystallized polysilicon on ceramics substrates by the open circuit voltage decay (OCVD) method and by the modulated photocurrent (MPC) method. We have found from both measurements that the lifetime in the Si film is comparable to or longer than 1 mu s. We discuss briefly the possible reasons for this rather long lifetime for recrystallized material.
引用
收藏
页码：L328 / L330
页数：3
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