DEEP LEVEL TRANSIENT SPECTROSCOPY OF NEUTRON-IRRADIATED SEMICONDUCTORS

被引：11

|

作者：

FARMER, JW

MEESE, JM

机构：

来源：

JOURNAL OF NUCLEAR MATERIALS | 1982年 / 108卷 / 1-2期

关键词：

D O I：

10.1016/0022-3115(82)90543-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：700 / 708

页数：9

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