DEEP LEVEL TRANSIENT SPECTROSCOPY OF NEUTRON-IRRADIATED SEMICONDUCTORS

被引：11
|
作者：
FARMER, JW
MEESE, JM
机构：
来源：
JOURNAL OF NUCLEAR MATERIALS | 1982年 / 108卷 / 1-2期
关键词：
D O I：
10.1016/0022-3115(82)90543-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：700 / 708
页数：9
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