DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS

被引：3544

作者：

LANG, DV ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 07期

关键词：

D O I：

10.1063/1.1663719

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3023 / 3032

页数：10

共 13 条

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