IMPURITY CENTERS IN PN JUNCTIONS DETERMINED FROM SHIFTS IN THERMALLY STIMULATED CURRENT AND CAPACITANCE RESPONSE WITH HEATING RATE

被引:150
作者
BUEHLER, MG
机构
关键词
D O I
10.1016/0038-1101(72)90068-8
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:69 / +
页数:1
相关论文
共 17 条
[1]  
BRAUNLICH P, 1967, J APPL PHYS, V38, P2516
[2]  
Bube R.H., 1960, Photoconductivity of Solids
[3]  
BUEHLER MG, 1970, F1962868C0184 CONTR
[4]   PROPERTIES OF GOLD IN SILICON [J].
BULLIS, WM .
SOLID-STATE ELECTRONICS, 1966, 9 (02) :143-&
[5]   EFFECTS OF VARIOUS HEATING RATES ON GLOW CURVES [J].
CHEN, R ;
WINER, SAA .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (13) :5227-&
[6]  
Grove A.S., 1967, Doping vs Ef
[7]   ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J].
HALL, RN .
PHYSICAL REVIEW, 1952, 87 (02) :387-387
[8]  
HALL RN, 1951, PHYS REV, V83, P228
[9]   1. PHENOMENOLOGICAL THEORY OF THERMOLUMINESCENCE [J].
KELLY, P ;
BRAUNLIC.P .
PHYSICAL REVIEW B, 1970, 1 (04) :1587-&
[10]  
MOLL JL, 1964, PHYSICS SEMICONDUCTO