DAMAGE CONSTANT AND DEEP-LEVEL TRANSIENT SPECTROSCOPY IN NEUTRON-IRRADIATED GAASP ALLOYS

被引:5
|
作者
GARCIA, F [1 ]
MUNOZ, E [1 ]
CALLEJA, E [1 ]
ALCOBER, V [1 ]
机构
[1] CIUDAD UNIV,DIV REACTORES EXPT,JUNTA ENERGIA NUCL,E-28040 MADRID,SPAIN
关键词
DEEP CENTERS - MIDGAP LEVELS - RADIATION DAMAGE - TRANSIENT SPECTROSCOPY;
D O I
10.1007/BF02655326
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:133 / 139
页数:7
相关论文
共 50 条
  • [1] DEEP LEVEL TRANSIENT SPECTROSCOPY OF NEUTRON-IRRADIATED SEMICONDUCTORS
    FARMER, JW
    MEESE, JM
    JOURNAL OF NUCLEAR MATERIALS, 1982, 108 (1-2) : 700 - 708
  • [2] DEEP-LEVEL TRANSIENT SPECTROSCOPY STUDIES OF MINORITY-CARRIER TRAPS IN NEUTRON-IRRADIATED SILICON
    TOKUDA, Y
    USAMI, A
    JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) : 2325 - 2327
  • [3] DEEP-LEVEL TRANSIENT SPECTROSCOPY MEASUREMENTS OF MAJORITY CARRIER TRAPS IN NEUTRON-IRRADIATED N-TYPE SILICON DETECTORS
    BORCHI, E
    BERTRAND, C
    LEROY, C
    BRUZZI, M
    FURETTA, C
    PALUDETTO, R
    RANCOITA, PG
    VISMARA, L
    GIUBELLINO, P
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1989, 279 (1-2): : 277 - 280
  • [5] The broad midgap deep-level transient spectroscopy band in proton (65 MeV) and fast neutron-irradiated n-GaAs
    Brudnyi, VN
    Gradoboev, AV
    Peshev, VV
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1999, 212 (02): : 229 - 239
  • [6] DEEP-LEVEL TRANSIENT SPECTROSCOPY STUDIES OF U-IRRADIATED SILICON
    MARY, P
    BOGDANSKI, P
    TOULEMONDE, M
    SPOHR, R
    VETTER, J
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 62 (03): : 391 - 393
  • [7] DAMAGE ALIGNMENT IN NEUTRON-IRRADIATED ZIRCONIUM ALLOYS
    NORTHWOOD, DO
    GILBERT, RW
    JOURNAL OF NUCLEAR MATERIALS, 1974, 51 (02) : 271 - 276
  • [8] INVESTIGATION OF ANNEALING OF NEUTRON-IRRADIATED N-TYPE SILICON BY THE DEEP LEVEL TRANSIENT SPECTROSCOPY METHOD
    VASILEV, AV
    KOPSHIK, IA
    SMAGULOVA, SA
    TSVAIGERT, MA
    SHAIMEEV, SS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (06): : 729 - 730
  • [9] DEEP-LEVEL LUMINESCENCE OF CR-DOPED GAASP ALLOYS
    FUJIWARA, Y
    KOJIMA, A
    NISHINO, T
    HAMAKAWA, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (01): : L4 - L6
  • [10] Carrier Capture Dynamics of Deep-Level Defects in Neutron-Irradiated Si With Improved Intracascade Potential
    Liu, Jun
    Li, Pengdi
    Zheng, Qirong
    Zhang, Chuanguo
    Li, Yonggang
    Zhang, Yongsheng
    Zhao, Gaofeng
    Yan, Xiaolan
    Huang, Bing
    Zeng, Zhi
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2023, 70 (02) : 113 - 122