DAMAGE CONSTANT AND DEEP-LEVEL TRANSIENT SPECTROSCOPY IN NEUTRON-IRRADIATED GAASP ALLOYS

被引：5
|
作者：
GARCIA, F [1 ]
MUNOZ, E [1 ]
CALLEJA, E [1 ]
ALCOBER, V [1 ]
机构：
[1] CIUDAD UNIV,DIV REACTORES EXPT,JUNTA ENERGIA NUCL,E-28040 MADRID,SPAIN
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1986年 / 15卷 / 03期
关键词：
DEEP CENTERS - MIDGAP LEVELS - RADIATION DAMAGE - TRANSIENT SPECTROSCOPY;
D O I：
10.1007/BF02655326
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：133 / 139
页数：7
相关论文
共 50 条
  • [21] DEEP-LEVEL TRANSIENT SPECTROSCOPY STUDIES OF CDMNTE
    SZATKOWSKI, J
    PLACZEKPOPKO, E
    HAJDUSIANEK, A
    KUZMINSKI, S
    BIEG, B
    BECLA, P
    ACTA PHYSICA POLONICA A, 1995, 87 (02) : 387 - 390
  • [22] Deep-level transient spectroscopy of GaN grown by electrochemical deposition and irradiated with alpha particles
    Ali, Abdulraoof I. A.
    Danga, Helga T.
    Nel, Jacqueline M.
    Meyer, Walter E.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2021, 127
  • [23] SINGLE SCAN DEEP-LEVEL TRANSIENT SPECTROSCOPY
    SU, Z
    FARMER, JW
    JOURNAL OF APPLIED PHYSICS, 1990, 68 (08) : 4068 - 4070
  • [24] Radiation Damage in Neutron-Irradiated V-Fe Alloys
    Porollo, S., I
    Dvoryashin, A. M.
    Konobeev, Yu, V
    PHYSICS OF METALS AND METALLOGRAPHY, 2022, 123 (08): : 784 - 790
  • [25] Constant-resistance deep-level transient spectroscopy in Si and Ge JFET's
    Kolev, PV
    Deen, MJ
    Kierstead, J
    Citterio, M
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (01) : 204 - 213
  • [26] Constant-resistance deep-level transient spectroscopy in Si and Ge JFET's
    Simon Fraser Univ, Vancouver, Canada
    IEEE Trans Electron Devices, 1 (204-213):
  • [27] CONSTANT-CAPACITANCE DEEP-LEVEL OPTICAL SPECTROSCOPY
    VILANOVA, J
    DUENAS, S
    RUBIO, E
    BAILON, L
    BARBOLLA, J
    LORATAMAYO, E
    SOLID-STATE ELECTRONICS, 1989, 32 (04) : 287 - 293
  • [28] INTERPRETATION OF DEEP-LEVEL OPTICAL SPECTROSCOPY AND DEEP-LEVEL TRANSIENT SPECTROSCOPY DATA - APPLICATION TO IRRADIATION DEFECTS IN GAAS
    LOUALICHE, S
    NOUAILHAT, A
    GUILLOT, G
    LANNOO, M
    PHYSICAL REVIEW B, 1984, 30 (10): : 5822 - 5834
  • [29] On the applicability of deep-level transient spectroscopy for the investigation of deep centers in silicon created by fast neutron irradiation
    St. Kliment Ohridski Univ of Sofia, Sofia, Bulgaria
    Appl Phys A, 2 (107-109):
  • [30] DETERMINATION OF DEEP-LEVEL PARAMETERS BY ISOTHERMAL DEEP-LEVEL TRANSIENT SPECTROSCOPY WITH OPTICAL-EXCITATION
    STUCHLIKOVA, L
    HARMATHA, L
    NAGL, V
    GAZI, M
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1993, 138 (01): : 241 - 248
12345