On the applicability of deep-level transient spectroscopy for the investigation of deep centers in silicon created by fast neutron irradiation

被引：0
|
作者：
St. Kliment Ohridski Univ of Sofia, Sofia, Bulgaria [1 ]
机构：
来源：
Appl Phys A | / 2卷 / 107-109期
关键词：
Capacitance measurement - Crystal defects - Ion implantation - Neutron irradiation - Ohmic contacts - Oxidation - Photolithography - Semiconducting silicon - Semiconductor diodes - Silicon wafers - Voltage measurement;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Deep-Level Transient Spectroscopy (DLTS) measurements were carried out on silicon p+nn+ diodes before and after irradiation with fast neutrons at room temperature with fluences 5.5 × 1011 and 1.0 × 1012 n/cm2. It was found out, that all preexisting defects decreased their amplitudes during irradiation, while only one defect, identified as a single-charged divacancy, increased in amplitude. An interpretation is proposed in terms of the cluster model, and the applicability of the DLTS is discussed.
引用
收藏
相关论文
共 50 条
  • [1] ON THE APPLICABILITY OF DEEP-LEVEL TRANSIENT SPECTROSCOPY FOR THE INVESTIGATION OF DEEP CENTERS IN SILICON CREATED BY FAST-NEUTRON IRRADIATION
    HARDALOV, CM
    STEFANOV, KD
    SUEVA, D
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1995, 61 (02): : 107 - 109
  • [2] Investigation of radiation damage in silicon produced by fast neutron irradiation with lifetime measurements and deep level transient spectroscopy
    Stefanov, KD
    Hardalov, CM
    Sueva, D
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1997, 163 (01): : 27 - 32
  • [3] STUDIES OF NEUTRON-PRODUCED DEFECTS IN SILICON BY DEEP-LEVEL TRANSIENT SPECTROSCOPY
    TOKUDA, Y
    SHIMIZU, N
    USAMI, A
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (02) : 309 - 315
  • [4] INTERPRETATION OF DEEP-LEVEL OPTICAL SPECTROSCOPY AND DEEP-LEVEL TRANSIENT SPECTROSCOPY DATA - APPLICATION TO IRRADIATION DEFECTS IN GAAS
    LOUALICHE, S
    NOUAILHAT, A
    GUILLOT, G
    LANNOO, M
    PHYSICAL REVIEW B, 1984, 30 (10): : 5822 - 5834
  • [5] Deep-level transient spectroscopy studies of silicon detectors after 24 GeV proton irradiation and 1 MeV neutron irradiation
    Ahmed, M
    Watts, SJ
    Matheson, J
    Holmes-Siedle, A
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2001, 457 (03): : 588 - 594
  • [6] DEEP-LEVEL TRANSIENT SPECTROSCOPY CHARACTERIZATION OF SILICON-SILICON INTERFACES
    STIEVENARD, D
    WALLART, X
    MATHIOT, D
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (11) : 7640 - 7644
  • [7] Piezoscopic deep-level transient spectroscopy studies of the silicon divacancy
    Dobaczewski, L
    Goscinski, K
    Zytkiewicz, ZR
    Nielsen, KB
    Rubaldo, L
    Andersen, O
    Peaker, AR
    PHYSICAL REVIEW B, 2002, 65 (11): : 1 - 4
  • [8] Centers with low correlation energy in deep-level transient spectroscopy studies
    Yarykin, Nikolai
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 23 (12)
  • [9] The Sliding-Aperture Transform and Its Applicability to Deep-Level Transient Spectroscopy
    Buchwald, Walter R.
    Peale, Robert E.
    Grant, Perry C.
    Logan, Julie, V
    Webster, Preston T.
    Morath, Christian P.
    APPLIED SCIENCES-BASEL, 2022, 12 (11):
  • [10] Deep defect centers in silicon carbide monitored with deep level transient spectroscopy
    Dalibor, T
    Pensl, G
    Matsunami, H
    Kimoto, T
    Choyke, WJ
    Schoner, A
    Nordell, N
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1997, 162 (01): : 199 - 225
12345