On the applicability of deep-level transient spectroscopy for the investigation of deep centers in silicon created by fast neutron irradiation

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St. Kliment Ohridski Univ of Sofia, Sofia, Bulgaria [1 ]
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Appl Phys A | / 2卷 / 107-109期
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Capacitance measurement - Crystal defects - Ion implantation - Neutron irradiation - Ohmic contacts - Oxidation - Photolithography - Semiconducting silicon - Semiconductor diodes - Silicon wafers - Voltage measurement;
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摘要：
Deep-Level Transient Spectroscopy (DLTS) measurements were carried out on silicon p+nn+ diodes before and after irradiation with fast neutrons at room temperature with fluences 5.5 × 1011 and 1.0 × 1012 n/cm2. It was found out, that all preexisting defects decreased their amplitudes during irradiation, while only one defect, identified as a single-charged divacancy, increased in amplitude. An interpretation is proposed in terms of the cluster model, and the applicability of the DLTS is discussed.
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