共 50 条
- [31] ANNEALING OF GALLIUM-ARSENIDE DOPED BY IMPLANTATION OF GROUP VI IONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (08): : 1455 - +
- [32] LASER ANNEALING OF POINT-DEFECTS IN SILICON AND GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (03): : 251 - 252
- [34] ANNEALING OF HEAVY-ION IRRADIATION DAMAGE IN GALLIUM-ARSENIDE TRANSACTIONS OF THE AMERICAN NUCLEAR SOCIETY, 1972, 15 (02): : 732 - +
- [35] THERMAL ANNEALING OF DEFECTS IN GALLIUM-ARSENIDE IRRADIATED WITH SULFUR IONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (02): : 196 - 198
- [36] OXIDE DISSOLUTION DURING THE ANODIZATION OF GALLIUM-ARSENIDE SOVIET ELECTROCHEMISTRY, 1989, 25 (03): : 362 - 364
- [37] FORMATION OF GALLIUM INTERSTITIALS DURING ZINC DIFFUSION INTO GALLIUM-ARSENIDE PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1981, 43 (05): : 1299 - 1314
- [38] RADIATION-INDUCED CARBON COMPLEXES IN GALLIUM-ARSENIDE NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1994, 90 (1-4): : 405 - 408