SEGREGATION OF CARBON ON GALLIUM-ARSENIDE SURFACE DURING ISOTHERMAL ANNEALING IN VACUUM

被引:0
|
作者
SVAKHIN, AS
RYZHIKOV, IV
机构
关键词
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:2081 / 2082
页数:2
相关论文
共 50 条
  • [21] CARBON, OXYGEN AND SILICON IMPURITIES IN GALLIUM-ARSENIDE
    BROZEL, MR
    CLEGG, JB
    NEWMAN, RC
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1978, 11 (09) : 1331 - 1339
  • [22] CARBON-ION-IMPLANTED GALLIUM-ARSENIDE
    SHIN, BK
    APPLIED PHYSICS LETTERS, 1976, 29 (07) : 438 - 440
  • [23] SURFACE-CHEMISTRY OF TRIMETHYLGALLIUM ON GALLIUM-ARSENIDE
    CREIGHTON, JR
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1990, 199 : 100 - COLL
  • [24] 2ND-HARMONIC GENERATION UNDER LASER ANNEALING OF THE GALLIUM-ARSENIDE SURFACE
    GALYAUTDINOV, MF
    KHAIBULLIN, IB
    SHTYRKOV, EI
    AKHMANOV, SA
    KOROTEEV, NI
    PAITEN, GA
    SHUMAI, IL
    KVANTOVAYA ELEKTRONIKA, 1983, 10 (06): : 1077 - 1078
  • [25] POSITRONIUM FROM A GALLIUM-ARSENIDE WAFER SURFACE
    RICEEVANS, PC
    SMITH, DL
    PHYSICS LETTERS A, 1989, 141 (3-4) : 201 - 203
  • [26] SURFACE STUDIES DURING MOLECULAR-BEAM EPITAXY OF GALLIUM-ARSENIDE
    PLOOG, K
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (03): : 838 - 846
  • [27] ELLIPSOMETRIC STUDY OF ETCHING OF GALLIUM-ARSENIDE SURFACE
    ROGOVSKII, PV
    EGOROV, AL
    EZHOVSKII, YK
    JOURNAL OF APPLIED CHEMISTRY OF THE USSR, 1984, 57 (09): : 1969 - 1971
  • [28] INTERACTION BETWEEN ALUMINUM AND GALLIUM-ARSENIDE SURFACE
    ALESHIN, VG
    NEMOSHKALENKO, VV
    SEMASHKO, EM
    SENKEVICH, AI
    PROKOPENKO, VM
    DOKLADY AKADEMII NAUK SSSR, 1982, 266 (05): : 1105 - 1107
  • [29] PULSED ANNEALING OF NEUTRON-TRANSMUTATION-DOPED GALLIUM-ARSENIDE
    KORSHUNOV, FP
    SOBOLEV, NA
    KOLIN, NG
    KUDRYAVTSEVA, EA
    PROKHORENKO, TA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (10): : 1169 - 1171
  • [30] AN INFRARED STUDY OF THE ANNEALING OF ELECTRON-IRRADIATED GALLIUM-ARSENIDE
    OZBAY, B
    NEWMAN, RC
    WOODHEAD, J
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (03): : 581 - 589