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- [2] A STUDY OF GALLIUM-ARSENIDE AND ALUMINUM GALLIUM-ARSENIDE REACTIVE ION ETCHING PARAMETERSJOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 1604 - 1605SCHERER, ABEEBE, ECRAIGHEAD, HG
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- [6] REACTIVE ION ETCHING OF GALLIUM-ARSENIDENUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 39 (1-4): : 496 - 499AVTIUSHKOV, APLABUNOV, VASTEKOLNIKOV, AF
- [7] THE ETCHING OF GALLIUM-ARSENIDE WITH IODINE MONOCHLORIDEJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (01) : 226 - 229HAHN, LLWONG, KCOGRYZLO, EA
- [8] ETCHING OF GALLIUM-ARSENIDE IN THE GLOW HYDROGEN DISCHARGEIZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII KHIMIYA I KHIMICHESKAYA TEKHNOLOGIYA, 1987, 30 (07): : 50 - 53SVETTSOV, VICHESNOKOVA, TASADINA, IY
- [9] SURFACE RIPPLES IN LASER-PHOTOCHEMICAL WET ETCHING OF GALLIUM-ARSENIDEAPPLIED PHYSICS LETTERS, 1983, 43 (02) : 189 - 191TSUKADA, NSUGATA, SSAITOH, HMITA, Y
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