AIRBRIDGE GATE FET FOR GAAS MONOLITHIC CIRCUITS

被引：1
|
作者：
BASTIDA, EM [1 ]
DONZELLI, G [1 ]
机构：
[1] TELETTRA,I-20059 VIMERCATE,ITALY
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1985年 / 33卷 / 12期
关键词：
MICROWAVE FET AMPLIFIERS;
D O I：
10.1109/TMTT.1985.1133261
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1585 / 1590
页数：6
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