AIRBRIDGE GATE FET FOR GAAS MONOLITHIC CIRCUITS

被引：1

|

作者：

BASTIDA, EM ^{[1
]}

DONZELLI, G ^{[1
]}

机构：

[1] TELETTRA,I-20059 VIMERCATE,ITALY

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1985年 / 33卷 / 12期

关键词：

MICROWAVE FET AMPLIFIERS;

D O I：

10.1109/TMTT.1985.1133261

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1585 / 1590

页数：6

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