GAAS LOSSY GATE DIELECTRIC FET

被引：1
|
作者：
ANDRADE, TL
BRASLAU, N
机构：
[1] IBM CORP,FED SYST DIV,MANASSAS,VA 22110
[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1981年 / 28卷 / 10期
关键词：
D O I：
10.1109/T-ED.1981.20569
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1244 / 1245
页数：2
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