A GAAS GATE HETEROJUNCTION FET

被引：98
|
作者：
SOLOMON, PM
KNOEDLER, CM
WRIGHT, SL
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 09期
关键词：
D O I：
10.1109/EDL.1984.25953
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：379 / 381
页数：3
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