A GAAS GATE HETEROJUNCTION FET

被引：98

|

作者：

SOLOMON, PM

KNOEDLER, CM

WRIGHT, SL

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 09期

关键词：

D O I：

10.1109/EDL.1984.25953

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：379 / 381

页数：3

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