PHOTOELECTRIC PROPERTIES OF CLEAVED GAAS GASB INAS AND INSB SURFACES - COMPARISON WITH SI AND GE

被引：208
|
作者：
GOBELI, GW
ALLEN, FG
机构：
来源：
PHYSICAL REVIEW | 1965年 / 137卷 / 1A期
关键词：
D O I：
10.1103/PhysRev.137.A245
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：A245 / &
相关论文
共 50 条
  • [31] Improvement the InAs, InSb, GaAs and GaSb surface state by nanoscale wet etching
    Levchenko, Iryna
    Tomashyk, Vasyl
    Malanych, Galyna
    Stratiychuk, Iryna
    Korchovyi, Andrii
    APPLIED NANOSCIENCE, 2022, 12 (04) : 1139 - 1145
  • [32] INVESTIGATION OF PHOTOELECTRIC PROPERTIES OF InAs-GaSb HETEROJUNCTIONS.
    Bergmann, Ya.V.
    Izvozchikov, B.V.
    Korol'kov, V.I.
    Mursakulov, N.N.
    Pramatarova, L.D.
    Tret'Yakov, D.N.
    Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1976, 10 (08): : 930 - 931
  • [33] Photoelectric properties of InAs/GaSb type-II superlattices
    Shi, Yanli
    Li, Fan
    Zhao, Lusheng
    Xu, Wen
    Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2011, 40 (06): : 981 - 985
  • [34] SURFACE STRESS IN POLISHED AND CLEAN (111) SURFACES OF GE INSB AND GASB
    TALONI, A
    HANEMAN, D
    SURFACE SCIENCE, 1967, 8 (03) : 323 - &
  • [35] PHONON VISCOSITY TENSOR OF SI, GE, GAAS, AND INSB
    HELME, BG
    KING, PJ
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 45 (01): : K33 - K37
  • [36] PHOTOELECTRIC PROPERTIES AND WORK FUNCTION OF CLEAVED GERMANIUM SURFACES
    GOBELI, GW
    ALLEN, FG
    SURFACE SCIENCE, 1964, 2 : 402 - 408
  • [37] Growth of InAs quantum dots on {110}-oriented cleaved GaAs surfaces
    Gerling, M
    Jeppesen, S
    Gustafsson, A
    Samuelson, L
    PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 2001, 87 : 383 - 384
  • [38] Formation of the InAs-, InSb-, GaAs-, and GaSb-polished surfacen
    Levchenko, Iryna
    Tomashyk, Vasyl
    Stratiychuk, Iryna
    Malanych, Galyna
    Korchovyi, Andrii
    Kryvyi, Serhii
    Kolomys, Oleksandr
    APPLIED NANOSCIENCE, 2018, 8 (05) : 949 - 953
  • [39] Formation of the InAs-, InSb-, GaAs-, and GaSb-polished surface
    Iryna Levchenko
    Vasyl Tomashyk
    Iryna Stratiychuk
    Galyna Malanych
    Andrii Korchovyi
    Serhii Kryvyi
    Oleksandr Kolomys
    Applied Nanoscience, 2018, 8 : 949 - 953
  • [40] ON THE THERMODYNAMIC PROPERTIES OF THE III-V COMPOUNDS INSB, GASB, AND INAS
    SCHOTTKY, WF
    BEVER, MB
    ACTA METALLURGICA, 1958, 6 (05): : 320 - 326
12345