PHOTOELECTRIC PROPERTIES AND WORK FUNCTION OF CLEAVED GERMANIUM SURFACES

被引：82

作者：

GOBELI, GW

ALLEN, FG

机构：

来源：

SURFACE SCIENCE | 1964年 / 2卷

关键词：

D O I：

10.1016/0039-6028(64)90081-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：402 / 408

页数：7

共 13 条

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[3]

FARNSWORTH HE, 1963, ANN NY ACAD SCI, V101, P658

[4] CONTACT POTENTIAL MEASUREMENTS ON CLEANED GERMANIUM SURFACES [J].

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[5] SURFACE MEASUREMENTS ON FRESHLY CLEAVED SILICON PARA-NORMAL JUNCTIONS [J].

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ALLEN, FG .

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[6] POLARIZATION EVIDENCE FOR MOMENTUM CONSERVATION IN PHOTOELECTRIC EMISSION FROM GERMANIUM + SILICON [J].

GOBELI, GW ;

KANE, EO ;

ALLEN, FG .

PHYSICAL REVIEW LETTERS, 1964, 12 (04) :94-&

[7] DIRECT AND INDIRECT EXCITATION PROCESSES IN PHOTOELECTRIC EMISSION FROM SILICON [J].

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ALLEN, FG .

PHYSICAL REVIEW, 1962, 127 (01) :141-&

[8]

GOBELI GW, UNPUB

[9]

GOBELI GW, 1964, UNPUB P SEMICONDUCTO

[10] STRUCTURAL PROPERTIES OF CLEAVED SILICON AND GERMANIUM SURFACES [J].

LANDER, JJ ;

GOBELL, GW ;

MORRISON, J .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (08) :2298-+

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