PHOTOELECTRIC PROPERTIES OF CLEAVED GAAS GASB INAS AND INSB SURFACES - COMPARISON WITH SI AND GE

被引：208
|
作者：
GOBELI, GW
ALLEN, FG
机构：
来源：
PHYSICAL REVIEW | 1965年 / 137卷 / 1A期
关键词：
D O I：
10.1103/PhysRev.137.A245
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：A245 / &
相关论文
共 50 条
  • [21] INFRARED FILTERS OF ANTIREFLECTED SI, GE, INAS, AND INSB
    COX, JT
    HASS, G
    JACOBUS, FG
    JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1959, 49 (11) : 1139 - 1139
  • [22] INVESTIGATION OF PHOTOELECTRIC PROPERTIES OF INAS-GASB HETEROJUNCTIONS
    BERGMANN, YV
    IZVOZCHIKOV, BV
    KOROLKOV, VI
    MURSAKULOV, NN
    PRAMATAROVA, LD
    TRETYAKOV, DN
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (08): : 930 - 931
  • [23] GE, GAAS AND INSB HETEROEPITAXY ON (100) SI
    HOUGHTON, DC
    BARIBEAU, JM
    JACKMAN, TE
    MCCAFFREY, J
    RAO, TS
    WEBB, JB
    PEROVIC, D
    WEATHERLY, GC
    NOAD, JP
    HETEROSTRUCTURES ON SILICON : ONE STEP FURTHER WITH SILICON, 1989, 160 : 75 - 83
  • [24] STRUCTURES AND PHASES OF CLEAVED GE AND SI SURFACES
    HANEMAN, D
    BACHRACH, RZ
    PHYSICAL REVIEW B, 1983, 27 (06): : 3927 - 3929
  • [25] Comparison of short period InAs/GaSb superlattices on GaSb and GaAs substrates
    GUO Jie CHEN HuiJuan SUN WeiGuo HAO RuiTing XU YingQiang NIU ZhiChuan Material SchoolNorthWest Polytechnical UniversityXian China Luoyang Optical Electronics CenterLuoyang China Institute of SemiconductorsChinese Academy of SciencesBeijing China
    中国科学:技术科学, 2010, (04) : 430 - 430
  • [26] Comparison of short period InAs/GaSb superlattices on GaSb and GaAs substrates
    GUO Jie1
    2 Luoyang Optical Electronics Center
    3 Institute of Semiconductors
    Science in China(Series E:Technological Sciences), 2009, 52 (01) : 23 - 27
  • [27] Comparison of short period InAs/GaSb superlattices on GaSb and GaAs substrates
    Jie Guo
    HuiJuan Chen
    WeiGuo Sun
    RuiTing Hao
    YingQiang Xu
    ZhiChuan Niu
    Science in China Series E: Technological Sciences, 2009, 52 : 23 - 27
  • [28] Improvement the InAs, InSb, GaAs and GaSb surface state by nanoscale wet etching
    Iryna Levchenko
    Vasyl Tomashyk
    Galyna Malanych
    Iryna Stratiychuk
    Andrii Korchovyi
    Applied Nanoscience, 2022, 12 : 1139 - 1145
  • [29] Comparison of short period InAs/GaSb superlattices on GaSb and GaAs substrates
    Guo Jie
    Chen HuiJuan
    Sun WeiGuo
    Hao RuiTing
    Xu YingQiang
    Niu ZhiChuan
    SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES, 2009, 52 (01): : 23 - 27
  • [30] MODEL DIELECTRIC-CONSTANTS OF GAP, GAAS, GASB, INP, INAS, AND INSB
    ADACHI, S
    PHYSICAL REVIEW B, 1987, 35 (14): : 7454 - 7463
12345