ANALYSIS OF THE HOLDING CURRENT IN CMOS LATCH-UP

被引：1
|
作者：
MATINO, H
机构：
来源：
IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1985年 / 29卷 / 06期
关键词：
SEMICONDUCTOR DEVICES; MOS;
D O I：
10.1147/rd.296.0588
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
The holding current in CMOS latch-up with or without well and/or substrate bias has been examined. Measurements indicate that the holding current increases significantly with reverse bias and low shunting base resistance. It is shown that a previous equation for the holding current is inaccurate, and a new equation for holding current with bias is presented.
引用
收藏
页码：588 / 592
页数：5
相关论文
共 50 条
  • [21] PREVENTION OF LATCH-UP CURRENT.
    Anon
    IBM technical disclosure bulletin, 1985, 27 (11): : 6717 - 6718
  • [22] The transient analysis of latch-up in CMOS transmission gate induced by laser
    Qiu, Weicheng
    Cheng, Xiang-Ai
    Wang, Rui
    Xu, Zhongjie
    Shen, Chao
    MICROELECTRONICS RELIABILITY, 2014, 54 (12) : 2775 - 2781
  • [23] Analysis and Countermeasure for Latch-up of CMOS Device in Electronic System Design
    WANG XINHUA WANG JIANFENZhejiang University of Science and TechnologyDepartment of information and electronic engineeringHangzhou China
    微计算机信息, 2008, (05) : 278 - 280
  • [24] IIIB-5 CURRENT CHARACTERIZATION OF SCR LATCH-UP IN CMOS CIRCUITS
    DISHAW, JP
    KOKKONEN, K
    MATTHEWS, A
    HENNING, A
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) : 1582 - 1583
  • [25] AN EFFICIENT NUMERICAL-MODEL OF CMOS LATCH-UP
    PINTO, MR
    DUTTON, RW
    IEEE ELECTRON DEVICE LETTERS, 1983, 4 (11) : 414 - 417
  • [26] LATCH-UP ELIMINATION IN BULK CMOS LSI CIRCUITS
    SCHROEDER, JE
    OCHOA, A
    DRESSENDORFER, PV
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1980, 27 (06) : 1735 - 1738
  • [27] LATCH-UP ANALYSIS OF CMOS INTEGRATED-CIRCUITS FOR AUTOMOTIVE APPLICATIONS
    ROCCHELLI, R
    ZANONI, E
    ALTA FREQUENZA, 1985, 54 (05): : 292 - 301
  • [28] CAREFUL DESIGN METHODS PREVENT CMOS LATCH-UP
    MANNONE, P
    EDN MAGAZINE-ELECTRICAL DESIGN NEWS, 1984, 29 (02): : 137 - &
  • [29] STATIC CMOS LATCH-UP CONSIDERATIONS IN HVIC DESIGN
    HUANG, Q
    AMARATUNGA, GAJ
    NARAYANAN, EMS
    MILNE, WI
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1990, 25 (02) : 613 - 616
  • [30] Nonstationary Single Event Latch-up in CMOS ICs
    Chumakov, Alexander, I
    Bobrovsky, Dmitry, V
    Pechenkin, Alexander A.
    Savchenkov, Dmitry, V
    Sorokoumov, Georgy S.
    2018 18TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS), 2018, : 200 - 203
12345