APPLICATION OF ALUMINUM-OXIDE TO INTEGRATED-CIRCUITS FABRICATION

被引：3

作者：

HARADA, H ^{[1
]}

SATOH, S ^{[1
]}

YOSHIDA, M ^{[1
]}

机构：

[1] MITSUBISHI ELECT CORP,ITAMI CITY,HYOGO 664,JAPAN

来源：

IEEE TRANSACTIONS ON RELIABILITY | 1976年 / 25卷 / 05期

关键词：

D O I：

10.1109/TR.1976.5220012

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：290 / 295

页数：6

共 50 条

[21] FABRICATION OF AN INTEGRATED MICROPROBING HEAD FOR FAULT ANALYSIS OF MOS INTEGRATED-CIRCUITS
SHOJI, S
ESASHI, M
MATSUO, T
SENSORS AND ACTUATORS, 1988, 14 (02): : 125 - 132
[22] APPLICATION OF SI-MBE FOR INTEGRATED-CIRCUITS
KASPER, E
WORNER, K
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (03) : C83 - C84
[23] APPLICATION OF DATA SCREENING TO THE CHARACTERIZATION OF INTEGRATED-CIRCUITS
GHAEMI, Z
CANADIAN JOURNAL OF PHYSICS, 1989, 67 (04) : 221 - 224
[24] TANTALUM OXIDE CAPACITORS FOR GAAS MONOLITHIC INTEGRATED-CIRCUITS
ELTA, ME
CHU, A
MAHONEY, LJ
CERRETANI, RT
COURTNEY, WE
ELECTRON DEVICE LETTERS, 1982, 3 (05): : 127 - 129
[25] REACTION BETWEEN ALUMINUM AND SIO2 IN INTEGRATED-CIRCUITS
CAVANAGH, E
FRANCO, JI
WALSOEDERECA, NE
JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (10) : 1877 - 1880
[26] HIGH-RATE SPUTTERING OF ALUMINUM FOR METALLIZATION OF INTEGRATED-CIRCUITS
MCLEOD, PS
HARTSOUGH, LD
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01): : 263 - 265
[27] SELECTIVE EPITAXIAL-GROWTH FOR THE FABRICATION OF CMOS INTEGRATED-CIRCUITS
IPRI, AC
JASTRZEBSKI, L
CORBOY, JF
METZL, R
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (12) : 1741 - 1748
[28] PARTICLE-BEAM FABRICATION AND INSITU PROCESSING OF INTEGRATED-CIRCUITS
STECKL, AJ
PROCEEDINGS OF THE IEEE, 1986, 74 (12) : 1753 - 1774
[29] APPLICATION OF A SOLUTION PROXIMITY ANNEALING TECHNIQUE FOR FABRICATION OF ION-IMPLANTED GAAS INTEGRATED-CIRCUITS
PRINCE, FC
ARMIENTO, CA
IEEE ELECTRON DEVICE LETTERS, 1986, 7 (01) : 23 - 25
[30] OPTOELECTRONIC INTEGRATED-CIRCUITS
FORREST, SR
PROCEEDINGS OF THE IEEE, 1987, 75 (11) : 1488 - 1497

← 1 2 3 4 5 →